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| BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright (c) 1997, Power Innovations Limited, UK MAY 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3 V, 3 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BD645 Collector-base voltage (IE = 0) BD647 BD649 BD651 BD645 Collector-emitter voltage (IB = 0) BD647 BD649 BD651 Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot 1/2LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 80 100 120 140 60 80 100 120 5 8 12 0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ C C C V V UNIT This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.4 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAY 1993 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD645 V (BR)CEO IC = 30 mA IB = 0 (see Note 5) BD647 BD649 BD651 VCE = 30 V ICEO Collector-emitter cut-off current V CE = 40 V V CE = 50 V V CE = 60 V VCB = 60 V V CB = 80 V V CB = 100 V ICBO Collector cut-off current V CB = 120 V V CB = 40 V V CB = 50 V V CB = 60 V V CB = 70 V IEBO hFE VCE(sat) V BE(sat) VBE(on) Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage VEB = VCE = IB = IB = IB = VCE = 5V 3V 12 mA 50 mA 50 mA 3V IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = IC = IC = IC = IC = 3A 3A 5A 5A 3A TC = 150C TC = 150C TC = 150C TC = 150C (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 2 2.5 3 2.5 V V V BD645 BD647 BD649 BD651 BD645 BD647 BD649 BD651 BD645 BD647 BD649 BD651 MIN 60 80 100 120 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 2.0 2.0 2.0 2.0 5 mA mA mA V TYP MAX UNIT NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.0 62.5 UNIT C/W C/W PRODUCT INFORMATION 2 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAY 1993 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 50000 TCS130AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 2*0 tp = 300 s, duty cycle < 2% IB = IC / 100 TCS130AB hFE - Typical DC Current Gain TC = -40C TC = 25C TC = 100C 10000 1*5 1000 1*0 VCE = 3 V t p = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 10 TC = -40C TC = 25C TC = 100C 0*5 0*5 1*0 IC - Collector Current - A 10 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C TCS130AC 2*5 2*0 1*5 1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 IC - Collector Current - A 10 Figure 3. PRODUCT INFORMATION 3 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAY 1993 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 SAS130AC IC - Collector Current - A 1*0 0*1 0.01 1*0 BD645 BD647 BD649 BD651 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C TIS130AC Figure 5. PRODUCT INFORMATION 4 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAY 1993 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE PRODUCT INFORMATION 5 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAY 1993 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 6 |
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